10Gbps VCSEL Driver in 0.18μm CMOS Technology-Reference-Cited by-同舟云学术

10Gbps VCSEL Driver in 0.18μm CMOS Technology

Published:2013-09-18 Issue: Volume:760-762 Page:147-151
ISSN:1662-8985
Container-title:Advanced Materials Research
language:
Short-container-title:AMR

Author:

Yu Bing Liang¹,Chen Ji²,Li Wen Yuan²

Affiliation:

1. Shandong Academy of Sciences Institute of Oceanographic Instrumentation

2. Southeast University

Abstract

A monolithically integrated 10Gbps Vertical Cavity Surface Emitting Laser (VCSEL) current driver is implemented in SMIC 0.18μm RF CMOS technology. High current driving capability as well as agile switching speed is achieved by shunt peaking technique and cascade structure. Test result shows that the driver can drive the common anode VCSEL well working at 10Gbps, and delivers 9.7mA modulation current. With single 1.8V power supply, the core power consumption is 22.5mW and the die size is 800μm×500μm.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Link

https://www.scientific.net/AMR.760-762.147.pdf

Reference7 articles.

1. Li Day Uei, Tsai Chia-Ming. 10-Gb/s modulator drivers with local feedback networks, [J]. IEEE Journal of Solid-State Circuits, 2006, 4l(5): 1025-1030.

2. Mangan A M. Millimeter-wave device characterization for nano-CMOS IC design, [D]. Toronto: Department of Electrical and Computer Engineering of University of Toronto, (2005).

3. Wu songchang, Feng Jun, zhang Li, Li Wei, A 10Gb/s laser diode driber in 0. 35μm SiGe BiCMOS technology, Journal of Southeast University(English Edition), 2009, vol. 25, No. 3, 309-312.

4. Lei Kai, Miao Yu, Feng Jun, Wang Zhigong, 10Gb/s 0. 18μm CMOS transceiver IC, semiconductor optoelectronics, 2005, Vol. 26, No. 4, 350-352.

5. Racanelli Maco, Kempf Paul, SiGe BiCMOS technology for RF circuit applications, [J]. IEEE Transactions on Electron Devices, 2005, 52(7): 1259-1270.