Affiliation:
1. King Mongkut’s Institute of Technology Ladkrabang
2. Sripatum University
Abstract
This paper presents the effect of X-ray irradiation on the electrical properties of Pt-doped P-N diode with X-ray energy 70 keV for 205 seconds. The results show that the radiation affected both reverse and forward current characteristics of P-N diode. The forward current is increased about 3 orders after radiation, while the leakage current is increased slightly after irradiation. Moreover, build-in voltage value is also changed after irradiation. The cause of parameters changing can be analyzed from carrier lifetime and series resistance. It can be seen clearly that X-ray irradiation technique are significant and can be used to improving electronic devices.
Publisher
Trans Tech Publications, Ltd.
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