Structural and Electrical Properties of Network Ni Films Sputter-Deposited at 300 K and 573 K

Abstract

80nm-thick network Ni films were sputter-deposited on anodic aluminium oxide (AAO) substrates at 300 K and 573 K. The network films are formed by granule connection. The granule consists of many fine grains. Both granule size and grain size are independent of the deposition temperature. A temperature dependence of the resistance within 1.6-300 K reveals that the network Ni film grown at 300 K exhibits a minimal resistance at about 25 K while that grown at 573 K does not show a minimal resistance. A temperature coefficient of resistance of the network film grown at 573 K is larger than that of the film grown at 300 K.