Affiliation:
1. China Electronics Technology Group Corporation
Abstract
a novel configuration for a novel ultra wideband switch is presented in this paper. This switch using 0.5um GaAs process in ADS2008 simulator. Switch should be designed to trade-off insertion loss, isolation, bandwidth, and return loss. The aims of design are to provide low insertion loss along with high isolation. The design using integration inductor and resistor in parallel, and this switch exhibits high performance: over DC-10.6GHz, insertion loss is lower than-1.624dB; the ripple variation of insertion loss is less than ±0.25dB; The isolation is lower than-51.336dB; input return loss is lower than-16.402dB; on state, output return loss is lower than-15.919dB; off state, output return loss is lower than-18.294dB; on and off time are less than 4ns.
Publisher
Trans Tech Publications, Ltd.
Reference17 articles.
1. Choong-yul Cha, KR, U.S. Patent 7, 847, 636. (2010).
2. Shey-Shi Lu, Taipei, TW. Patent 7, 755, 435. (2010).
3. Maeco Cassia, CA, U.S. Patent 8, 395, 435. (2013).
4. Buber, T.; Kinayman, N.; Yun, Yong‐Hoon; Brogle, J.: Low-loss high-isolation 60-80 GHz GaAs SPST PIN switch [C]. Proceedings of Microwave Symposium Digest, IEEE, 2003: pp.1307-1310.
5. Jung Gil Yang; Hyunchul Eom; Sunkyu Choi; Kyounghoon Yang: 2-38 GHz Broadband Compact InGaAs PIN Switches using a 3-D MMIC Technology [C]. Proceedings of Indium Phosphide & Related Materials, IEEE, 2007: pp.542-545.
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