DC~10.6GHz Ultra Wideband SPDT Switch

Author:

Liu Cheng Peng1,Shi Jian Gang1,He Zheng Rong1,Zou Wei1

Affiliation:

1. China Electronics Technology Group Corporation

Abstract

a novel configuration for a novel ultra wideband switch is presented in this paper. This switch using 0.5um GaAs process in ADS2008 simulator. Switch should be designed to trade-off insertion loss, isolation, bandwidth, and return loss. The aims of design are to provide low insertion loss along with high isolation. The design using integration inductor and resistor in parallel, and this switch exhibits high performance: over DC-10.6GHz, insertion loss is lower than-1.624dB; the ripple variation of insertion loss is less than ±0.25dB; The isolation is lower than-51.336dB; input return loss is lower than-16.402dB; on state, output return loss is lower than-15.919dB; off state, output return loss is lower than-18.294dB; on and off time are less than 4ns.

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. GaAs MMIC Wideband SP8T Switch;Applied Mechanics and Materials;2014-08

2. Wideband SPDT Switch With TTL Control;Applied Mechanics and Materials;2014-08

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