Vertical Floating Zone Crystal Growth of R2PdSi3 Intermetallic Compounds (R=Pr and Nd)

Abstract

The class ofR2PdSi3single crystals (R= rare earth element) with hexagonal AlB2-type crystallographic structure reveals the systematic dependence of anisotropic magnetic properties governed by the interplay of crystal-electric field effects and magnetic two-ion interactions. Here we compare the floating zone (FZ) crystal growth with radiation heating of compounds Pr2PdSi3and Nd2PdSi3. The congruent melting behavior enabled moderate growth velocities of 3 to 5 mmh-1. The preferred growth directions are close to the basal plane of the hexagonal unit cell. The composition of the crystals, is slightly Pd-depleted with respect to the nominal composition 16.7 at.% Pd. The Pr2PdSi3compound exhibit antiferromagnetic order below the Néel temperatures TN: 2.17 K and Nd2PdSi3compound order ferromagnetically below the Curie temperatureTC= 15.1 K.