Influence of Titanium Ion Doped Amount on the Dielectric Property of BMNT Ceramics

Abstract

Bi2(Mgl/3Nb2/3-xTix)2O7(BMNT)(x=0.1, 0.15, 0.2, 0.25) ceramics was prepared by conventional solid phase method, The influence of titanium ion doped amount on the dielectric property and microstructure of BMNT ceramics were systematically studied by X-ray diffraction (XRD), scanning electron microscopy (SEM) and other testing and analysis how to methods. Results show that there is single monoclinic pyrochlore phase and there is not the second phase in all BMNT ceramics doped with titanium ion. The grain size of BMNT ceramics increases first and then decreases, the dielectric constant (εr) increases first and then decreases, the dielectric loss (tanδ) increases first and then decreases, the ceramic density decreases all the time while titanium ion doped amount increases. The ceramic density increases first and then decreases when sintered temperature increases. The density of BMNT ceramics doped with titanium ion is biggest when sintered temperature is 980 °C. When sintered temperature is 980 °C and titanium ion doped amount is 0.15mol, the dielectric properties of BMNT ceramics is good,which εr is 135(1MHz), tanδ is 0.002(1MHz) and volume density is 7.46g/cm3.