The Atomic Force Microscope Study of Self-Assembled Silicon Nanodots Growth Using Magnetron Sputtering System

Abstract

In this paper self-assembled silicon nanodots have been grown on silicon substrate using radio-frequency magnetron sputtering system. This system were settled at varying experimental conditions such as substrate temperature, time of deposition, RF power and fixed argon flow rate. Then the surface roughness was measured by AFM which resulted average dots size of 113 nm. However, the presence of a small amount of grain atoms formed on the surface was confirmed using SEM measurement. The crystalline Si-NDs with (100) plane contributed sharp diffraction peak located at 69.5° was confirmed using XRD measurement. These results of Si-NDs structural properties support the possible growth technique of radio-frequency magnetron sputtering.