Affiliation:
1. National Academy of Sciences of Ukraine
Abstract
In the paper a measurement technique for study main technical and physical parameters of nanocluster non-volatile memory capacitance cell is presented. The charging/discharging process features associated with nanoclusters (nanocrystals) incorporated into gate dielectric are discussed. Original equipment for fast capacitance measurements based on computer interfaces is considers.
Publisher
Trans Tech Publications, Ltd.
Reference11 articles.
1. S. Tiwari, F. Rana, H. Hanafi, A. Hartstein, E. F. Crabbe´, K. Chan, A silicon nanocrystals based memory, Appl. Phys. Lett. 68 (1996) 1377-1379.
2. A. Thean, J. -P. Leburton, Flash memory: towards single-electronics, IEEE Potentials, 21 (2002) 35-41.
3. A. Nazarov, V. Turchanikov, Complex nature of charge trapping and retention in NC NVM structures, in: Y. Masuda (Ed. ), Nanocrystals, Sciyo, Crotia, 2010, pp.207-230.
4. T. -C. Changa, F. -Y. Jiana, S. -C. Chenc, Y. -T. Tsai, Developments in nanocrystal memory, Materials Today, 14 (2011) 608-615.
5. E.H. Nicollian and J.R. Brews, MOS Physics and Technology, John Wiley&Sons, New York, (1982).
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