Abstract
We have successfully formed Fe-nanodots with an areal dot density as high as ~2.4×1011cm-2on thermally grown SiO2by exposing a 3-nm-thick Fe layer to a remote plasma of pure H2without external heating. During remote H2plasma exposure, the surface temperature rising up to ~500 °C was caused by surface recombination of atomic H, which enhanced surface migration of Fe atoms and promoted self-assembling nanodots. Electrical separation among Fe-nanodots was also verified from the changes in surface potential after charge injection using an AFM/Kelvin probe technique. The magnetic characterization by using magnetic force microscopy suggests that Fe-nanodots act as not only charge storage nodes but also spin-dependent active elements.
Publisher
Trans Tech Publications, Ltd.
Reference12 articles.
1. Z. Liu, C. Lee, V. Narayanan, G. Pei, and E. C. Kan, IEEE Trans. Electron Device. 49 (2002) 1606.
2. H. Kirimura, Y. Uraoka, T. Fuyuki, M. Okuda and I. Yamashita, Appl. Phys. Lett. 86 (2005) 262106.
3. W. M. Tsang, V. Stolojan, B. J. Sealy, S. P. Wong and S.R.P. Silva, Ultramicroscopy, 107 (2007) 819.
4. K. Inomata and Y. Saito, Appl. Phys. Lett. 73 (1998) 1143.
5. M. Takata, S. Kondoh, T. Sakaguchi, H. Choi, J. -C. Shim, H. Kurino and M. Koyanagi, IEDM Tech. Dig. 2003, p.553.
Cited by
7 articles.
订阅此论文施引文献
订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献