The Monte Carlo Method Used in Self-Switching Device

Abstract

Optoelectronic Devices have obtained great interests for many decades. With the development of technology and in-depth research, the devices are scaled down rapidly, reaching sub-millimeter or even nanometer scale, and resulting in various new features. In recent years, a so called Self-Switching Device (SSD) which has diode-like I-V characteristics has attracted more and more attentions. Using Monte Carlo method, we have studied the electron transport in the self-switching device. Simulation results show that when the device size is smaller than the mean free path of electrons, the electron velocity is very different from that of larger device. The electron velocity and the energy become faster and higher, respectively. The reason of this phenomenon is explained by ballistic transport of electrons in the small size device. Since ballistic transport plays an important role in determining the behavior of electrons in small size device, it is need to be included in nanometer scale device modeling.