Affiliation:
1. King Mongkut's Institute of Technology Ladkrabang
2. Electronics Research Center (ERC)
3. Thai Microelectronics Center (TMEC), National Electronics and Computer Technology Center (NECTEC), National Science and Technology Development Agency (NSTDA)
Abstract
In this paper, we introduced a P-buried (Pb) layer under trench gate which relieved the electric field crowding in the Non Punch Through Trench gate Insulated Gate Bipolar Transistor (NPT-TIGBT) structure. The Pblayer, with carrier concentration of 5x1016cm-3, was created underneath the trench gate within the n-drift layer. In this way, the concentration of electric field at the trench bottom corner decreased. As a result, the breakdown voltage characteristics of NPT-TIGBT improved. The structures were proposed and verified by T-CAD Sentuarus simulation. From the simulation results, the breakdown voltage increased by approximately 30% compared with conventional NPT-TIGBT.
Publisher
Trans Tech Publications, Ltd.
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