Effect of Annealing Temperature on Electrical Properties of ZnTe Layers Grown by Thermal Evaporation-Reference-Cited by-同舟云学术

Effect of Annealing Temperature on Electrical Properties of ZnTe Layers Grown by Thermal Evaporation

Published:2012-12 Issue: Volume:608-609 Page:1314-1317
ISSN:1662-8985
Container-title:Advanced Materials Research
language:
Short-container-title:AMR

Author:

Hsu Cheng Hsing¹,Tseng Ching Fang¹,Yu Yi Ting¹,Yang Pai Chuan¹,Lai Chun Hung¹,Lin Jenn Sen¹,Yang His Wen¹

Affiliation:

1. National United University

Abstract

The electrical properties of evaporated ZnTe films were investigated with emphasis on the effects of an annealing temperature from 600oC to 800oC by RTA technique. Crystallinity, carrier concentration, sheet resistance, and mobility are shown to be dependent on the annealing temperature. The highest carrier concentration and lowest sheet resistance are 7.9×1015cm-3and 9300 Ω/□ at an annealing temperature of 700oC, respectively. The mobility was found to vary from 20 to 50 cm2V-1S-1. The ZnTe thin films using thermal evaporation can find applications in solar cell or light emitting diodes

Publisher

Trans Tech Publications, Ltd.

Subject

General Engineering

Link

https://www.scientific.net/AMR.608-609.1314.pdf

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