Study of the Electrical Properties of Monolayer MoS2 Semiconductor

Abstract

We present the study of the electrical properties of monolayer MoS2 in terms of semiconductor theory. The free electron and hole concentrations formulas in two-dimensional (2D) semiconductors have been developed based on three-dimensional (3D) semiconductors theory, and derived the intrinsic carrier concentration equation of 2D system. Using these equations, we simulated the intrinsic carrier concentration in monolayer MoS2 with temperature. The intrinsic carrier density in monolayer MoS2 increases exponentially with temperature, but it lows a few orders of magnitude than that of 3D semiconductor. It means that monolayer MoS2 based devices can operated at very high temperatures. Accordingly, the conductivity and resistivity were simulated for 2D MoS2, the former increases exponentially while the latter decreases with temperature or carrier concentration.