Abstract
Under different growth conditions, silicon Oxide (SiOx) thin films were deposited successfully on Si (100) substrates and glass substrates by plasma enhanced chemical vapor deposition (PECVD). The thickness, refractive index and growth rate of the thin films were tested by ellipsometer. The effects of deposition temperature on the structure and properties of SiOx films were studied using X ray diffraction (XRD), X ray photoelectron spectroscopy (XPS) and UV-Visible spectroscopy. The results show that the SiOx films were amorphous at different deposition temperature. The peaks of Si2p and O1s shifted to higher binding energy with temperature increasing. The SiOx films had high transmissivity at the range of 400-900nm. By analyzing the observation and data, the influence of deposition parameters on the electrical properties and interface characteristics of SiOx thin film prepared by PECVD is systematically discussed. At last, SiOx thin film with excellent electrical properties and good interface characteristic is prepared under the relatively optimum parameters.
Publisher
Trans Tech Publications, Ltd.
Reference8 articles.
1. H. TREICHEL, R. BRAUN, Z. GABRIC, et al. Planarized low-stress oxide/ nitride passivation for ULSI devices, J De Physique Ⅳ. Vol. 02 (1991), p.839.
2. D C Bartle, D C Andtews, J D Grange, et al. Plasma enhanced deposition of silicon nitride for use as an encapsulant for silicon ion-implanted gallium arsenide, Vacuum. Vol. 34 (1984), p.315.
3. U. Kahler and H. Hofmeister, Silicon nanocrystallites in buried SiOx layers via direct wafer bonding, Appl Phys Lett. Vol. 75 (1999), p.641.
4. T. Inokuma, Y. Wakayama, T. Muramoto, et al. , Optical properties of Si clusters and Si nanocrystallites in high temperature annealed SiOx films, J. Appl Phys. Vol. 83 (1998), p.2228.
5. Jing Tan , Jingchun Li , Mohua Yang, et al. Preparation of Low-Temperature SiO2 Gate Insulators for Strained Si-Channel Heterojunction PMOSFET's, Microelectronics. Vol. 35 (2005), p.118.