Study of Residue Stress and Phase Structure of c-BN Films with BNx Implanted Buffer Interlayer on High Speed Steel Substrate

Abstract

In this paper, the influence of the BNx implanted buffer layer on growth and residue stress of c-BN films were mainly investigated. The experiment results showed that the introduce of BNx implanted buffer interlayer can increase the c-BN content in the films and reduce the residue stress obviously. When the nitrogen dose was 9.6×1017 N+/cm2, the residue stress of c-BN films reached the least value of 3.0GPa. AFM showed that the surface of the c-BN film on the BNx implanted buffer layer is low in roughness and small in grain size. XPS analysis results show an interfacial mixing in the buffer layer have an even N/B distribution. And the surface of buffer interlayer was mainly in BN phase, which is the main reason to improve the growth conditions and reduce the residue stress of c-BN films.