Affiliation:
1. Shenzhen University
2. Nagoya Institute of Technology
Abstract
The problem of a point dislocation interacting with an elliptical hole at the interface of two bonded half-planes is studied. Complex stress potentials are obtained by applying the methods of complex variables and conformal mapping. A rational mapping function that maps a half plane with a semi-elliptical notch onto a unit circle is used for mapping the bonded half-planes. The solution derived can serve as Green’s function to study internal cracks interacting with an elliptical interfacial cavity.
Publisher
Trans Tech Publications, Ltd.
Cited by
1 articles.
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1. Interaction of an elliptic hole with interface of two bonded half-planes;Vestnik of Saint Petersburg University. Applied Mathematics. Computer Science. Control Processes;2016