The New Material Structure Design and Research of the GaAs-Based Resonant Tunneling Diodes

Author:

Wang Jie1,Zhang Bin Zhen1

Affiliation:

1. North University of China

Abstract

Use MBE technology grew three different structures’ RTD to get a contrast test on device with different thickness of well structure’s DC character,they all grew on semi-insulating GaAs substrates, and use I-V analysis instrument tested the I-V character of the RTD in room temperature, in the test results , the PVCR of the best device was up to 7.1,VP is reduced to 0.4V ,then we analyzed the relationship between the device material structure and I-V character , this paper provided a reference for the better performance of the RTD structure design.

Publisher

Trans Tech Publications, Ltd.

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