0.75SrBi2Ta2O9-0.25Bi3TiTaO9 Layered Structural Thin Films: Microstructure and Ferroelectric Properties
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Published:2008-02
Issue:
Volume:368-372
Page:1814-1816
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ISSN:1662-9795
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Container-title:Key Engineering Materials
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language:
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Short-container-title:KEM
Author:
Xie Dan1,
Zhang Zhi Gang2,
Ren Tian Ling1,
Liu Li Tian1
Affiliation:
1. Tsinghua University
2. Xi’an Technological University
Abstract
{0.75SrBi2Ta2O9-0.25Bi3TiTaO9}(SBT-BTT) thin films were prepared by the modified metalorganic
solution deposition (MOSD) technique. The microstructure and ferroelectric properties of SBTBTT
thin films were studied. The SBT-BTT thin films were produced at 750°C. The grain size and
surface roughness of SBT-BTT films showed significant enhancement with an increase in annealing
temperatures. It is found that SBT-BTT thin films have good ferroelectric properties. The measured
remanent polarization values for SBT-BTT, SBT and BTT capacitors were 15, 7.5 and 4.8μC/cm2,
respectively. The coercive field for SBT-BTT capacitors was 50kV/cm. More importantly, the polarization
of SBT-BTT capacitors only decreased 5% after 1011 switching cycles at a frequency of 1MHz.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science