Growth and Characterization of Silicon Carbide by Sublimation

Abstract

Bulk silicon carbide (SiC) single crystal was fabricated by attaching abrasive SiC powder directly to graphite electrode. The substrate temperature was important to SiC crystal growth. When the temperature of substrate varied from 2300K to 2600K, with substrate temperature increase, the size of finally obtained SiC single crystal increased. At 2600K, the maximum size of SiC crystal, 2cm in diameter, was obtained. The effect of temperature to SiC single crystal growth rate and the growth kinetics were discussed. The phase composition and surface morphology was studied by XRD and SEM respectively.