Abstract
Ba0.65Sr0.35TiO3 (BST) thin films on p-silicon substrates were deposited by radio frequency
magnetron sputtering. The effects of the deposition parameters on the crystallization and
microstructure of BST thin films were investigated by X-ray diffraction and filed emission electron
microscopy, respectively. The crystallization behavior of these films was apparently affected by the
substrate temperature, annealing temperature and sputtering pressure. The improved crystallization
can be observed for BST thin films that deposited at higher temperature. The dominant X-ray
diffraction peaks became sharper and more intense as the annealing temperature increased. BST thin
films deposited at high sputtering pressure of 3.9 Pa exhibited the (110) + (200) preferred orientation.
Possible correlations of the crystallization with the sputtering pressure were discussed. The SEM
morphology indicated the film was small grains and smooth.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Cited by
3 articles.
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