Fracture Origins in Miniature Silicon Carbide Structures-Reference-Cited by-同舟云学术

Fracture Origins in Miniature Silicon Carbide Structures

Published:2005-07 Issue: Volume:290 Page:62-69
ISSN:1662-9795
Container-title:Key Engineering Materials
language:
Short-container-title:KEM

Author:

Quinn George D.¹,Sharpe William N.²,Beheim Glenn M.³,Nemeth Noel N.⁴,Jadaan Osama⁵

Affiliation:

1. National Institute of Standards and Technology

2. Johns Hopkins University

3. NASA Glenn Research Center (GRS)

4. NASA Glenn Research Center

5. University of Wisconsin-Platteville

Abstract

Direct tension strength tests were conducted on chemical vapor deposited silicon carbide microspecimens. Three types of specimens were used: straight gage section, tapered gage section, and notched gage section. The average strengths and standards deviations were: 0.42 GPa ± 0.13 GPa; 0.47 GPa ± 0.16 GPa; and 0.68 GPa ± 0.19 GPa, respectively. The fracture origins were identified by fractographic analysis and were cracks in large grains next to surface grooves from the deep reactive ion etch (DRIE) process used to fabricate the specimens.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,General Materials Science

Link

https://www.scientific.net/KEM.290.62.pdf

Reference16 articles.

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2. W.N. Sharpe, Jr., D.A. LaVan, and R.L. Edwards: in Proc. Transducers '97, Chicago, IL, (1997), pp.607-610.

3. J. Bagdahn, W.N. Sharpe, Jr., and O. Jadaan: Journal of Microelectromechanical Systems, Vol. 12, (2003), pp.302-312.

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