Application of Surface Electron Beam Induced Voltage Method for the Contactless Characterization of Semiconductor Structures-Reference-Cited by-同舟云学术

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Application of Surface Electron Beam Induced Voltage Method for the Contactless Characterization of Semiconductor Structures

Published:1998-12 Issue: Volume:63-64 Page:327-332
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Rau E.I.¹,Zhukov A.N.,Yakimov Eugene B.²

Affiliation:

1. M.V. Lomonosov Moscow State University

2. Russian Academy of Sciences

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.63-64.327.pdf

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Two-photon confocal microscopy in the study of the volume characteristics of semiconductors;Technical Physics;2016-12

2. Applications of Fianite in Electronics;Advances in OptoElectronics;2012-12-19

3. Studying the characteristics of the photosensitive elements of photodetector matrices based on Si Pt: Si by means of induced potential and transmission electron microscopy;Bulletin of the Russian Academy of Sciences: Physics;2012-09

4. Surface electron-beam induced voltage study of the characteristics of Si Pt: Si photodetector matrices;Bulletin of the Russian Academy of Sciences: Physics;2010-07

5. Heteroepitaxial GaN films on silicon substrates with porous buffer layers;Bulletin of the Russian Academy of Sciences: Physics;2008-11

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