Synthesis and Properties of Nd-Substituted Bismuth Titanate Polycrystalline Thin Films with a-/b-Axes Orientation

Abstract

Nd-substituted Bi4Ti3O12 (BNT) polycrystalline thin films with preferred a-/b-axes orientations were grown on sputter-grown IrO2(101) layers by chemical solution deposition method. After optimizing the heat treatment conditions, insulating characters and ferroelectric properties in 250-nm-thick BNT thin films with a-/b-axes orientations were investigated at room temperature. Low leakage current density of J=10-7~10-8 A/cm2 at 100 kV/cm and fair value of remnant polarization (2Pr=31 μC/cm2 at 400 kV/cm) were measured even though the Bi2O2 blocking layer aligned parallel to the film normal.