Photoluminescence from ZnO Thin Film Deposited on R-Plane Sapphire Substrate by RF Magnetron Sputtering
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Published:2008-09
Issue:
Volume:388
Page:19-22
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ISSN:1662-9795
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Container-title:Key Engineering Materials
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language:
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Short-container-title:KEM
Author:
Tanaka Shigeru1,
Ishikawa Yukari1,
Suzuki Toshiyuki1,
Shibata Noriyoshi1
Affiliation:
1. Japan Fine Ceramics Center
Abstract
Photoluminescence from epitaxial ZnO thin films deposited on R-plane sapphire substrates by RF
magnetron sputtering was investigated. The intensity of the near band emission (NBE) of the ZnO
thin film on R-plane sapphire was stronger than that of the film formed on C-plane sapphire at a low
temperature. Some experimental results suggest that NBE depends on the polarization of the
excitation light, which are considered to be related to the ZnO crystal orientation on the sapphire
substrate.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,General Materials Science
Cited by
1 articles.
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