Affiliation:
1. Saint-Petersburg Electrotechnical University “LETI”
2. Ascatron AB
3. ABB Switzerland Ltd
Abstract
Electrical properties of the gate oxides thermally grown in N2O on n-type and p-type 4H-SiC have been compared using conventional MOS structure and inversion-channel MOS structure, respectively. Sufficient difference in the electrical properties of the gate oxides grown on n-type and p-type 4H-SiC was revealed. We conclude that the gate oxide process optimisation using inversion-channel MOS devices is superior as compared to the conventional MOS structure.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
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