RHEED Study of Epitaxial Graphene on Conductive and Semi-Insulating 6H-SiC (0001) Substrates-Reference-Cited by-同舟云学术

RHEED Study of Epitaxial Graphene on Conductive and Semi-Insulating 6H-SiC (0001) Substrates

Published:2015-06 Issue: Volume:821-823 Page:945-948
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Kotousova Irina S.¹,Lebedev Sergey P.¹,Lebedev Alexander A.¹

Affiliation:

1. Ioffe Physical-Technical Institute of the Russian Academy of Sciences

Abstract

The technique of reflection high-energy electron diffraction (RHEED) has been applied to study the graphene growth on conductive and semi-insulating 6H-SiC (0001) substrates using two RHEED devices. It was found the oriented growth of graphene on the conductive wafer and both oriented as disordered graphene growth on semi-insulating wafer due to the partial formation of polycrystalline component in nanocarbon film. It was shown that the appearance of the graphene polycrystalline phase was caused by the lower perfection structure of the surface of the semi-insulating substrate as compared to the conductive substrate.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.821-823.945.pdf

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