Affiliation:
1. Russian Academy of Sciences
Abstract
4H-SiC p+nn+ structures fabricated by implantation of Al into a commercial n-type 4H-SiC epitaxial layer doped to (3-5)1015cm-3 have been studied. Structures with unstable excess forward current were characterized by electron beam induced current (EBIC) and secondary electron (SE) methods and by Auger-electron spectroscopy (AES). Numerous defects were found with a depth which exceed the thickness of the p+-layer. Also, it was demonstrated that the concentration of carbon on the SiC surface always exceeds that of silicon, which may be the reason for the initially unstable conductivity via the defects.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference3 articles.
1. A. M. Strel'chuk, E. V. Kalinina, A. A. Lebedev, I. K. Boricheva, V. V. Pavshukov, Variant of excess current in 4H-SiC pn structures, Mat. Sci. Forum Vols. 778-780 (2014) 859-862.
2. E. V. Kalinina, V. G. Kossov, R.R. Yafaev, A. M. Strel'chuk, G. N. Violina, High-temperature radiation-strong rectifier based on 4H-SiC Al-ion implanted p+-n-junction, Semiconductors 44 (2010) 778-788.
3. Practical surface analysis by Auger and x-ray photoelectron spectroscopy, ed. by D. Briggs, M.P. Seach, NewYork, 1983, pp.123-126.
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1 articles.
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