TiN/AlN Nano Multilayers Film Fabricated by Plasma Enhanced Atomic Layer Deposition

Abstract

TiN/AlN nanomultilayers were fabricated by plasma enhanced atomic layer deposition (PEALD). The multi-layers were characterized by HRSEM, XRD, EDS and nanoIndenter. The results showed that TiN/AlN nanomultilayers had a good periodic modulation structure, but with quite a lot of O and C contamination which were brought from PEALD process. The O and C contamination impede the crystallization of TiN, leading to a poor hardness of these nanomultilayers. No super-hardness phenomenon was identified based on Koehler theory. Much more attention needs to be paid on decreasing the O and C contamination in PEALD process.