Digital Etching of GaAs Materials: Comparison of Oxidation Treatments

Author:

Rebaud Mickaël1,Roure Marie Christine1,Enyedi Virginie1,Borowik Lukasz1,Martinez Eugénie1,Toselli Laura1,Besson Pascal1

Affiliation:

1. CEA

Abstract

Oxidation of a GaAs surface was performed with liquid H2O2, gaseous O2 and O3 in order to identify the best solution for digital etching. The oxide layer formed with H2O2 is Garich and exhibits surface roughening which can be understood by oxide hydrolysis/condensation model. Roughening makes aqueous H2O2 irrelevant as an oxidizing agent for repeated oxidation steps. On the other hand, a smooth oxide layer can be obtained with gaseous O2 and O3. Thickness of the formed oxide layer is controlled by time exposure to the oxidizing agent. The nature of the oxide was analyzed by XRay Photo-electron Spectroscopy and is also timedependent.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Effect of Post-Etch Wet Cleaning on GaAs Surfaces;Solid State Phenomena;2023-08-14

2. Characterization of Wet Chemical Atomic Layer Etching of InGaAs;Solid State Phenomena;2021-02

3. GaAs WET and Siconi Cleaning Sequences for an Efficient Oxide Removal;ECS Journal of Solid State Science and Technology;2019

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