Affiliation:
1. MEMC Electronic Materials
Abstract
Lifetime-degrading recombination centres those that emerge in the presence of excess carriers in boron and oxygen containing silicon - show a peculiar dependence on the concentrations of the relevant impurities, B and O, and on the hole concentrationp0(net doping) in materials that contain compensating donors (phosphorus or Thermal Donors) or added Ga acceptors. The data indicate involvement of both substitutional (Bs) and interstitial (Bi) boron atoms in the major recombination centres observed in p-Si. A suggested model ascribes degradation to the presence of a BiBsO latent defect inherited from the thermal history in a recombination-inactive atomic configuration. In the presence of excess electrons, this latent defect reconfigures into a recombination-active centre. The defect concentration dependence on the material parameters is reduced, in some special cases, to a proportionality top0[2or to [ [2. The essential feature is an involvement of a fast-diffusing species Biin the defect. This species can be removed to the boron nanoprecipitates thus eliminating the defects responsible for the degradation.
Publisher
Trans Tech Publications, Ltd.
Subject
Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics
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