Optical and Electrical Properties of ZnO Thin Films Grown by Sol-Gel Method-Reference-Cited by-同舟云学术

Optical and Electrical Properties of ZnO Thin Films Grown by Sol-Gel Method

Published:2013-04 Issue: Volume:200 Page:14-21
ISSN:1662-9779
Container-title:Solid State Phenomena
language:
Short-container-title:SSP

Author:

Bala Waclaw¹,Zorenko Yurij¹,Savchyn Volodymyr²,Voznyak Taras³,Paprocki Kazimierz¹,Popielarski Pawel¹,Szybowicz Miroslaw⁴

Affiliation:

1. Kazimierz Wielki University

2. Ivan Franko National University of L'viv

3. Ivan Franko National University of Lviv

4. Poznan University of Technology

Abstract

The ZnO thin films have been produced on p-type Si and quartz substrates by the spin-coating method and after deposition were heated at different temperatures in the range from 650K to 850K. The photoluminescence (PL) and cathodoluminescence (CL) measurements were carried out at temperature range 12K-350K. I-V, C-V measurements were performed on the Al/ZnO/Si/Al structures at different temperatures. The structural properties of the ZnO thin films were carried out using x-ray and SEM method. The effects of the thickness variation and annealing temperature on the crystallinity parameters were observed. The electrical response of grains, grain boundaries, and contacts of the ZnO film was obtained.

Publisher

Trans Tech Publications, Ltd.

Subject

Condensed Matter Physics,General Materials Science,Atomic and Molecular Physics, and Optics

Link

https://www.scientific.net/SSP.200.14.pdf

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