Effect of Anneal Time on Photoelectric Properties of SnS:Ag Thin Films

Abstract

SnS and Ag films were deposited on glass substrates by vacuum thermal evaporation successively, and then the thin films were annealed at 260°C in N2 for different times (60min, 120min, 180min) in order to investigate the influence of annealing time on the silver-doped SnS (SnS:Ag) films. The obtained films annealed at different times are polycrystalline SnS with orthogonal structure, and the crystallites in the films are exclusively oriented along the {111} direction. With the increase of annealing time, the uniformity and crystallization of the films are improved, the carrier concentration and mobility of the films first rise and then drop, whereas their resistivity and direct bandgap energy Eg show the contrary trend.