Affiliation:
1. Nagoya Institute of Technology
Abstract
By overcoming less excitation efficiency of rare-earth ions due to small oscillator strength
(∼10-6) of f-f transition, Eu3+ ions were intentionally introduced to nano-sized semiconductor of tin
oxide (SnO2) in silica (SiO2)matrix via a sol-gel route. As a consequence, the excitation energy was
significantly absorbed by the nano-sized SnO2 with controlled band-gap energy owing to quantum
size effect (QSE) and subsequently transferred from nano-sized SnO2 to the Eu3+ ions doped,
resulting in the enhancement of Eu3+ red emission (external quantum efficiency : 75.6 %).
Publisher
Trans Tech Publications, Ltd.
Cited by
4 articles.
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