Electro-Thermal SPICE Model for High-Voltage SiC VJFETs
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Published:2009-03
Issue:
Volume:615-617
Page:731-734
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ISSN:1662-9752
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Container-title:Materials Science Forum
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language:
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Short-container-title:MSF
Author:
Elpelt Rudolf1,
Friedrichs Peter1,
Hippeli J.2,
Schörner Reinhold2,
Treu Michael3,
Türkes Peter1
Affiliation:
1. Infineon Technologies AG
2. SiCED Electronics Development GmbH & Co. KG
3. Infineon Technologies Austria AG
Abstract
After the successful introduction of silicon carbide Schottky-Barrier diodes in 2001, next commercial devices will be switching components. The development focus is targeted to MOSFETs and VJFETs. Regarding VJFETs, a promising device was presented several years ago and tested successfully in several applications. Since the unconventional device structure does not allow the use of classical JFET models, a new electro-thermal model was developed, taking into account the features of the design as well as the targeted enlarged range of operating temperatures.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science