Anisotropic Ostwald Ripening in Silicon Nitride: On the Reaction-Controlled Kinetics

Abstract

A model for anisotropic Ostwald ripening was developed using a chemical potential (weighted mean curvature) difference as a driving force for mass-transport. Based on this model, grain growth simulations of silicon nitride during the phase transformation and Ostwald ripening were performed. Comparison with experimental results during the phase transformation suggests that grain growth be controlled by interfacial reaction. Simulations of Ostwald ripening predict that the growth exponent be 3 for the reaction-controlled case, and increases up to 5 as the growth kinetics shifts from reaction-controlled to diffusion-controlled. It was reported that the mean aspect ratio of silicon nitride crystals increased during the phase transformation, and decreased during Ostwald ripening. These behaviors were successfully simulated by this model. The concave depression at the tip of silicon nitride crystal that was experimentally observed. Simulations by the Ostwald ripening model demonstrated that it could be developed when the liquid phase was super-saturated, and further that the tip shape was a function of the liquid concentration.