Affiliation:
1. Acreo AB
2. KTH Royal Institute of Technology
Abstract
The electrical properties of oxides fabricated on n-type 3C-SiC (001) using wet oxidation and an advanced oxidation process combining SiO2 deposition with rapid post oxidation steps have been compared. Two alternative SiO2 deposition techniques have been studied: the plasma enhanced chemical vapor deposition (PECVD) and the low pressure chemical vapor deposition (LPCVD). The post-oxidized PECVD oxide is been demonstrated to be beneficial in terms of interface traps density and reliability.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
2 articles.
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