Galvanomagnetic Properties of 3C-SiC/6H-SiC Heterostructures
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Published:2008-09
Issue:
Volume:600-603
Page:541-544
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ISSN:1662-9752
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Container-title:Materials Science Forum
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language:
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Short-container-title:MSF
Author:
Lebedev Alexander A.1,
Abramov Pavel L.1,
Agrinskaya Nina V.1,
Kozub Ven I.1,
Kuznetsov Alexey N.1,
Lebedev Sergey P.1,
Oganesyan Gagik A.1,
Sorokin L.M.1,
Chernyaev A.V.1,
Shamshur Dmitrii1
Affiliation:
1. Russian Academy of Sciences
Abstract
3C-SiC epitaxial layers were grown by method of sublimation epitaxy in vacuum on 6HSiC
substrates. It was done investigation of magneto resistance and Hall effect of 3C-SiC/6H-SiC
heterostructures in temperature range 1,4 – 300 К. At helium temperatures it was founded low
samples resistance and negative magneto-resistance in week magnetic field ( ~ 1 T). Analysis of
obtained results shows, that low samples resistance can be connected with metal-isolation junction
in 3C-SiC epitaxial films..
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science