Affiliation:
1. Mitsubishi Electric Corporation
2. Toray Research Center Inc.
Abstract
Crystalline recovery mechanism in the activation annealing process of Al implanted 4H-SiC crystals
were experimentally investigated. Annealing temperature and annealing time dependence of acceptor
activation and activated hole’s behavior were examined. Poly-type recovery from the implantation
induced lattice disordering during the annealing was investigated. The existence of meta-stable
crystalline states for acceptor activation, and related scattering centers due to annealing is reported
To achieve 100% acceptor activation and to reduce strain after ion implantation, annealing at 2000°C
for 10 min. was required.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Reference18 articles.
1. W.J. Choyke: Silicon Carbide, Pergamon press (1969).
2. M. Bhatnagar and B.J. Baliga, IEEE Trans. Electron Devices, 40, (1993) 645.
3. G.S. Tompa et al.,J. Crystal Growth, 145, (1994) 655.
4. N. Ohtani, et al : Mater. Sci. Forum, 29 (2002) 389-393.
5. S. Izumi et al : Appl Phys. Lett., 86, (2005) 202108.
Cited by
4 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献