Photoluminescence of Passivated a-Si:H
-
Published:2009-01
Issue:
Volume:609
Page:281-285
-
ISSN:1662-9752
-
Container-title:Materials Science Forum
-
language:
-
Short-container-title:MSF
Author:
Brunner Róbert1,
Kobayashi Hikaru2,
Kučera M.1,
Takahashi Masao2,
Rusnák Jaroslav1,
Pinčík Emil1
Affiliation:
1. Slovak Academy of Sciences
2. Osaka University
Abstract
. Experimental results relating to evolution of the a-Si:H photoluminescence spectra are presented. The investigated samples were prepared by deposition of thin a-Si:H layer on glass substrate. In the a-Si:H surface region very thin oxide layer was prepared by wet chemical oxidation in 40% nitric acid solution. The defect states of amorphous silicon layer and its interface with oxide were passivated in HCN aqueous solutions. The attention was focused on decomposition procedure of photoluminescence spectra observed at 6 K. The results confirm the existence of several structurally different phases inside of the a-Si:H amorphous matrix.
PACS: 78.55.-m, 78.55.Qr, 81.05.Gc
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
1 articles.
订阅此论文施引文献
订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献