Polytypism Study in SiC Epilayers Using Electron Backscatter Diffraction

Author:

Kościewicz Kinga1,Strupiński Wlodek1,Wierzchowski Wojciech1,Wieteska Krzysztof2,Olszyna Andrzej Roman3

Affiliation:

1. Institute of Electronic Materials Technology

2. Institute of Atomic Energy POLATOM

3. Institute of Ceramics, Glass, Refractories and Building Materials

Abstract

The electron backscatter diffraction (EBSD) detector placed inside a commercial scanning electron microscope (SEM) has been used to study of different SiC polytypes. Different growth conditions in chemical vapor deposition (CVD) method were applied to obtain the 3C- and 4H-SiC polytypes epitaxial layers. Growth processes were conducted on the Si-face on-axis 4H-SiC substrates. The growth temperature was in the range of 1300-1620°C and the reactor pressure was 75mbar. The initial C/Si ratio was varied from 0.075 reaching final value of 1.8. It was observed that intentional ramping of the C/Si ratio at the first stage of the growth clearly influences the 4H/3C factor. The growth temperature and ramping of the C/Si ratio were the main parameters to achieve a homogeneous 3C and 4H-SiC epitaxial layers.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Cited by 3 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线,采集、加工和组织学术论文而形成的新型学术文献查询和分析系统,可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容,当前同舟云学术共收录了国内外主流学术期刊6万余种,收集的期刊论文及会议论文总量共计约1.5亿篇,并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询!咨询电话:010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号  京ICP备18003416号-3