Properties of Pt-Assisted Electroless Etched Silicon in HF/Na2S2O8 Solution
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Published:2009-01
Issue:
Volume:609
Page:231-237
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ISSN:1662-9752
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Container-title:Materials Science Forum
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language:
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Short-container-title:MSF
Author:
Megouda N.1,
Hadjersi T.2,
El Kachai O.1,
Boukherroub R.,
Guerbous L.3
Affiliation:
1. Université M. Mammeri
2. Unité de Développement de la Technologie du Silicium
3. Centre de Recherche Nucléaire d’Alger (CRNA)
Abstract
The paper reports on hydrothermal electroless etching of high resistivity p-type Si(100) at 35°C. A thin layer of platinum (Pt) was deposited onto the silicon surface by evaporation under vacuum (~ 10-6 Torr) prior to immersion in a solution of HF/Na2S2O8. The HF concentration was kept at 22.5 M while the concentration of Na2S2O8 was varied from 0.03 to 0.18 M. The etching time was varied from 15 to 75 min. The morphology and optical properties of the etched layer as a function of oxidant concentration and etching time were investigated using scanning electron microscopy (SEM) and photoluminescence measurements.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science