The Deposition of 3C-SiC Thin Films onto the (111) and (110) Faces of Si Using Pulsed Sputtering of a Hollow Cathode-Reference-Cited by-同舟云学术

The Deposition of 3C-SiC Thin Films onto the (111) and (110) Faces of Si Using Pulsed Sputtering of a Hollow Cathode

Published:2010-04 Issue: Volume:645-648 Page:131-134
ISSN:1662-9752
Container-title:Materials Science Forum
language:
Short-container-title:MSF

Author:

Huguenin-Love James¹,Lauer Noel T.¹,Soukup Rodney J.¹,Ianno Ned J.¹,Kment Štepan²,Hubička Zdenek²

Affiliation:

1. University of Nebraska-Lincoln

2. Academy of Sciences of Czech Republic

Abstract

Thin films of SiC have been deposited using a hollow cathode sputtering technique. Several methods have been used including DC, RF, and pulsed sputtering. The films reported here have been deposited using DC and pulsed sputtering.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Link

https://www.scientific.net/MSF.645-648.131.pdf

Reference12 articles.

1. W. E. Nelson, F. A. Halden, and A. Rosengreen: J. Appl. Phys. Vol. 37 (1966), pp.333-336.

2. J. Cooper Jr.: Mater. Sci. Forum Vol. 389-393 (2002), pp.15-22.

3. I. H. Khan: Mater. Res. Bull. Vol. 4 (1969), pp. S285-S292.

4. M. Suemitsu, Y. Miyamoto, H. Handa, and A. Konno: J. Surf. Sci. Nanotech. Vol. 7 (2009), pp.311-313.

5. K. Volz, S. Schreiber, J. W. Gerlach, W. Reiber, B. Rauschenbach, B. Stritzker, W. Assmann, and W. Ensinger: Mater. Sci. Eng. A Vol. 289 (2000), pp.255-264.

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1. Growth and characterization of silicon carbide thin films on silicon using a hollow cathode pulse sputtering technique;Thin Solid Films;2012-01

2. Structural Investigations of a Sputtered Intermediate Carbonization Layer for 3C-SiC on (111) and (110) Si Substrates;Materials Science Forum;2011-03