P- and n-Type Doping in SiC Sublimation Epitaxy Using Highly Doped Substrates

Abstract

The co-doping of nitrogen and aluminum has been studied in the sublimation epitaxy growth process. It is shown that the doping may be tuned from n-type to p-type by effect of substrate doping, growth face and volume of the growth crucible. The co-doped layers show a nearly ideal I V characteristic and luminescence at room temperature.