Fabrication of P-Channel MOSFETs on 4H-SiC C-Face

Author:

Okamoto Mitsuo1,Iijima Miwako1,Yatsuo Tsutomu2,Nagano Takahiro1,Fukuda Kenji1,Okumura Hajime1

Affiliation:

1. National Institute of Advanced Industrial Science and Technology (AIST)

2. National Institute of Advanced Industrial Science and Technology, AIST

Abstract

We investigated the 4H-SiC C-face MOS interface properties around valence-band, and fabricated 4H-SiC C-face p-channel MOSFETs for the first time. For C-face p-channel MOSFETs, relatively low-temperature wet-gate-oxidation was preferable. Post-deposition-annealing for contact metal was found to degrade the C-face MOS interface around valence-band. Low-temperature (800°C) PDA in hydrogen including ambient was effective to some extent in order to suppress the degradation owing annealing. We obtained C-face p-channel MOSFET with normal FET operation by utilizing 900°C wet-gate-oxidation and 800°C PDA in He-H2 forming gas ambient.

Publisher

Trans Tech Publications, Ltd.

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

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