Growth of 6H-SiC Single Crystals under Quasi-Equilibrium Conditions

Abstract

Silicon carbide single crystals grown by the seeded physical vapour transport method have been investigated. These crystals were grown on the Si-face (0001) of 6H-SiC seeds. The growth proceeded under quasi-equilibrium conditions with the growth rate in the range 0.05-0.2 mm/h, that was extremely low as compared to used in standard growth processes. The shape and morphology of the crystallization fronts have been studied. Moreover, defects in crystals and wafers cut from these crystals were examined by optical and atomic force microscopy combined with KOH etching and X-Ray diffraction.