Schottky Barrier Lowering in 4H-SiC Schottky UV Detector
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Published:2008-09
Issue:
Volume:600-603
Page:1215-1218
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ISSN:1662-9752
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Container-title:Materials Science Forum
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language:
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Short-container-title:MSF
Author:
Sciuto Antonella1,
Roccaforte Fabrizio1,
di Franco Salvatore1,
Raineri Vito1
Affiliation:
1. Consiglio Nazionale delle Ricerche (CNR)
Abstract
The Schottky barrier lowering in 4H-SiC interdigit Schottky-type UV photodiode is investigated in
the presence of a thermally grown oxide layer on the exposed active area. Gain photocurrent is
observed and correlated with the presence of the oxide and with the charge traps at the
semiconductor/oxide interface. Photo-thermally stimulated current measurements evidenced that
interface charge accumulation is optically promoted. Rise and fall photo-current measurements
provided the time parameter of the trapping phenomenon.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
1 articles.
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