Determination of Ambipolar Lifetime and Epilayer Thickness of 5kV SiC Bipolar Devices by Transient Switching Studies
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Published:2008-09
Issue:
Volume:600-603
Page:1031-1034
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ISSN:1662-9752
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Container-title:Materials Science Forum
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language:
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Short-container-title:MSF
Author:
Ben Salah Tarek1,
Risaletto Samien1,
Raynaud Christophe1,
Besbes Kamel2,
Bergogne Dominique3,
Planson Dominique1,
Morel Hervé3
Affiliation:
1. Université de Lyon
2. Faculté des Sciences de Monastir
3. INSA Lyon
Abstract
A novel experimental set-up is developed and validated to characterize high voltage diodes in
transient switching mode. Parameters extracted from DMTVCA and OCVD techniques, like
ambipolar lifetime, epilayer thickness and doping level, diode area, are validated in a buck converter
with resistive load. The experimental set-up allows to measure the current and voltage transient
characteristics without noise and influence of high parasitic wiring. Experimental results are
compared with device simulations and a good correlation is found.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science