Fast Switching Characteristics of 4H-SiC RESURF-Type JFET
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Published:2008-09
Issue:
Volume:600-603
Page:1095-1098
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ISSN:1662-9752
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Container-title:Materials Science Forum
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language:
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Short-container-title:MSF
Author:
Fujikawa Kazuhiro1,
Sawada Kenichi1,
Tsuno Takashi1,
Tamaso Hideto1,
Harada Shin1,
Namikawa Yasuo1
Affiliation:
1. Sumitomo Electric Industries, LTD
Abstract
400V/2.5A 4H-SiC JFETs having a reduced surface field (RESURF) structure were
fabricated. Measurements on the static and switching characteristics were carried out. The
on-resistance was 0.86 W. The turn-on time (ton) and the turn-off time (toff) were 8ns and 10 ns,
respectively. The fabricated JFETs showed low on-resistance and fast switching characteristics.
4H-SiC RESURF-type JFETs, which is a sort of lateral transistor, are preferable to a module
configuration of switching devices. Moreover, they are promising for application to DC power
supplies with higher efficiency and smaller size owing to their low on-resistance and fast switching
characteristics.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
1 articles.
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