Homoepitaxial Growth of 4H-SiC by Hot-Wall CVD Using BTMSM
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Published:2008-09
Issue:
Volume:600-603
Page:151-154
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ISSN:1662-9752
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Container-title:Materials Science Forum
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language:
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Short-container-title:MSF
Author:
Seo Han Seok1,
Song Ho Geun1,
Moon Jeong Hyun1,
Yim Jeong Hyuk1,
Oh Myeong Sook1,
Lee Jong Ho1,
Choi Yu Jin1,
Kim Hyeong Joon1
Affiliation:
1. Seoul National University
Abstract
Homoepitaxial growth of 4H-SiC epilayer by hot-wall chemical vapor deposition using bis-trimethylsilylmethane (BTMSM, C7H20Si2) precursor was investigated. The growth rate of 4H-SiC was investigated as a function of the growth temperature and source flow rate. The FWHM values of epilayers as the growth temperature and source flow rate also investigated. The growth rate of 4H-SiC epilayer grown by hot-wall CVD was 3.0 μm/h and the background doping level of 4H-SiC epilayer was mid 1015/cm3.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
1 articles.
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