Characterization of SiOF Thin Films Deposited by PECVD from Hexamethyldisiloxane in Mixture with Oxygen and CF4
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Published:2009-01
Issue:
Volume:609
Page:59-62
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ISSN:1662-9752
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Container-title:Materials Science Forum
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language:
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Short-container-title:MSF
Author:
Chabane R.1,
Sahli Salah1,
Zenasni A.2,
Raynaud Patrice2,
Segui Y.2
Affiliation:
1. Université Mentouri Constantine
2. Université Paul Sabatier
Abstract
Thin SiOF films were elaborated in microwave excited DECR plasma reactor (Distributed Electron Cyclotron Resonance) from a mixture of hexamethyldisiloxane (HMDSO) and oxygen (O2) (in 1: 9 proportion) with the presence of various CF4 concentrations. The fluorine contents in the films composition were adjusted by the CF4 gas flow ratio (in the range of 10 - 70%). The refractive index and the deposition rate were estimated from ellipsometric data and the film chemical structure was studied by FTIR analysis technique. The deposition rate increases with increasing CF4 flow and then decreases after reaching a maximum value for 20% of CF4. The decrease in the deposition rate may be attributed to the etching effect by CF4 plasma during the deposition process. As the additive fluorine concentration increases, the intensity of Si–F peak stretching vibrations located at 930 cm-1 increases and the frequency of the Si–O stretching vibration mode centered at 1060 cm-1 shifts towards higher wavenumber.
Publisher
Trans Tech Publications, Ltd.
Subject
Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science
Cited by
1 articles.
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